PG03DXTEV_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DXTEV
TVS Diode Array for ESD
Protection in Portable Electronics
FEATURES
hESD Protection: IEC 61000-4-2 Level 4.
MILSTD883C-Method 3015-6:Class 3
hFour separate unidirectional configurations for protection
hLow leakage current<1ǺA @3Volts
hLow capacitance
hComplies to USB 1.1 low speed & high speed specifications
APPLICATIONS
hCell phone handsets and accessories.
hCordless phones.
hPersonal digital assistants (PDA s)
hNotebooks, desktopsPC, & servers.
hPortable instrumentation.
hSet-Top Box, DVD Player.
hDigital Camera.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Peak Pulse Power (tp=8/20Ǻs)
Peak Pulse Current (tp=8/20Ǻs)
Operating Temperature
Storage Temperature
SYMBOL
P_PK
I_PP
T_j
T_stg
RATING
20
1.6
-55q150
-55q150
UNIT
W
A


B
B1
1
5
2
3
4
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
1.6 +_ 0.05
1.0+_ 0.05
1.6+_ 0.05
1.2+_ 0.05
0.50
0.2+_ 0.05
0.5+_ 0.05
0.12+_ 0.05
5
1. (TVS) D1 CATHODE
2. COMMON ANODE
3. (TVS) D2 CATHODE
4. (TVS) D3 CATHODE
5. (TVS) D4 CATHODE
TESV
Marking
5
4
Type Name
TA
Lot No.
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
V_RWM
V_BR
I_R
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=3V
I_PP=1.6A, tp=8/20Ǻs
V_R=0V, f=1MHz
V_R=3.0V, f=1MHz
MIN.
-
5.3
-
-
-
-
TYP.
-
-
-
-
13
7.0
MAX.
3.3
5.9
1
13
17
11.5
UNIT
V
V
ǺA
V
pF
2008. 9. 10
Revision No : 2
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