PG03DXTEV_08 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DXTEV
TVS Diode Array for ESD
Protection in Portable Electronics
FEATURES
ESD Protection: IEC 61000-4-2 Level 4.
MILSTD883C-Method 3015-6:Class 3
Four separate unidirectional configurations for protection
Low leakage current<1 A @3Volts
Low capacitance
Complies to USB 1.1 low speed & high speed specifications
APPLICATIONS
Cell phone handsets and accessories.
Cordless phones.
Personal digital assistants (PDA’s)
Notebooks, desktopsPC, & servers.
Portable instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
P_PK
Peak Pulse Current (tp=8/20 s)
I_PP
Operating Temperature
T_j
Storage Temperature
T_stg
RATING
20
1.6
-55 150
-55 150
UNIT
W
A
B
B1
1
5
2
3
4
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
1.6 +_ 0.05
1.0+_ 0.05
1.6+_ 0.05
1.2+_ 0.05
0.50
0.2+_ 0.05
0.5+_ 0.05
0.12+_ 0.05
5
1. (TVS) D1 CATHODE
2. COMMON ANODE
3. (TVS) D2 CATHODE
4. (TVS) D3 CATHODE
5. (TVS) D4 CATHODE
TESV
Marking
5
4
Type Name
TA
Lot No.
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
V_RWM
V_BR
I_R
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=3V
I_PP=1.6A, tp=8/20 s
V_R=0V, f=1MHz
V_R=3.0V, f=1MHz
MIN.
-
5.3
-
-
-
-
TYP.
-
-
-
-
13
7.0
MAX.
3.3
5.9
1
13
17
11.5
UNIT
V
V
A
V
pF
2008. 9. 10
Revision No : 2
1/2