PG03DBVSC_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DBVSC
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
CATHODE MARK
2
1
B
DIM MILLIMETERS
A
A
1.4 +_ 0.05
B
1.0 +_ 0.05
C
0.6 +_ 0.05
D
0.28 +_ 0.03
E
0.5 +_ 0.05
F
0.12 +_ 0.03
1. ANODE
2. ANODE
VSC
Marking
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power(tp=8/20 )
P_PK
Junction Temperature
T_j
Storage Temperature
T_stg
RATING
50
-55 150
-55 150
UNIT
W
2
1
3B
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Zener Voltage
Reverse Leakage Current
V_RWM
V_Z
I_R
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=3.3V
V_R=0V, f=1MHz
MIN.
-
4.2
-
-
TYP.
-
-
-
-
MAX.
3.3
6.2
20
25
UNIT
V
V
A
pF
2007. 9. 10
Revision No : 1
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