PF1010DF8 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – Silicon Planar Type Diode

SEMICONDUCTOR
TECHNICAL DATA
For EMI Filtering and ESD Protection.
FEATURES
EMI/RFI filtering.
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
Good attenuation of high frequency signals.
Low clamping voltage.
Low operating and leakage current.
Four elements in one package
APPLICATIONS
Cell phone handsets.
RF communications equipment.
PF1010DF8
Silicon Planar Type Diode
F
E
G
1
4
A
GN^HD PAD
I
B
Top View
D
Side View
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
8
5
H
Bottom View
DIM MILLIMETERS
A
2.0 +_ 0.05
B
2.0 +_ 0.05
C
C
D
0.75 +_ 0.05
0.2 +_ 0.02
E
0.5
F
0.23 +_ 0.05
G
0.35 +_ 0.05
H
1.2 +_ 0.05
I
0.6 +_ 0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
P_D
T_j
T_stg
RATING
300
-55 150
-55 150
UNIT
mW
EQUIVALENT CIRCUIT
FILTERn*
100Ω
DFN-8
FILTERn*
10pF
10pF
GND
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Attenuation Frequency
Resistance
Capacitance
SYMBOL
V_RWM
V_BR
I_R
f_3dB
f_25dB
R
C
TEST CONDITION
-
I_t=1mA
V_RWM=3V
V_R=0V, Z_SOURCE=50 , Z_LOAD=50
V_R=0V, Z_SOURCE=50 , Z_LOAD=50
Between Input and Output
V_R=2.5V, Between I/O Pins and GND
MIN.
-
6
-
-
800
-
-
TYP.
-
-
-
150
-
100
20
MAX.
5
-
0.1
-
3,000
-
-
UNIT
V
V
A
MHz
MHz
pF
2006. 8. 8
Revision No : 2
1/2