PF1005UDF8B_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – ESD/EMI Filter

SEMICONDUCTOR
TECHNICAL DATA
PF1005UDF8B
ESD/EMI Filter
APPLICATION
hI/O ESD protection for mobile handsets, notebook, PDAs, etc.
hEMI filtering for data ports in cell phones, PDAs, notebook computers
hEMI filtering for LCD, camera and chip-to-chip data lines
FEATURES
hEMI/RFI filtering
hESD Protection to IEC 61000-4-2 Level 4
hLow insertion loss
hGood attenuation of high frequency signals
hLow clamping voltage
hLow operating and leakage current
hFour elements in one package
DESCRIPTION
PF1005UDF8B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates four pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PF1005UDF8B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
DC Power Per Resistor
P_R
Power Dissipation
*P_D
Junction Temperature
T_j
Storage Temperature
T_stg
* Total Package Power Dissipation
RATING
100
400
150
-55q150
UNIT
mW


EQUIVALENT CIRCUIT
FILTERn*
100Ω
FILTERn*
5pF
5pF
A
Pin 1
TOP VIEW
C
E
1
4
GND PAD
8
D⁵
BOTTOM VIEW
K
L
SIDE VIEW
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
1.70 +_ 0.10
1.35 +_ 0.10
1.20 +_ 0.10
0.20 +_ 0.05
0.40
0.40 +_ 0.10
0.25 +_ 0.10
0.20 Min
0.50 +_ 0.05
0.127
0.02+0.03/-0.02
UDFN-8B
MARKING
Type Name
T1
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
0.40
0.30
GND _0.25
0.70
GND
ELECTRICAL CHARACTERISTICS (Ta=25Y)
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Channel Resistance
Line Capacitance
SYMBOL
V_RWM
V_BR
I_R
fc_-3dB
R_LINE
C_LINE
TEST CONDITION
-
I_t=1mA
V_RWM=3.3V
V_Line=0V, Z_SOURCE=50ʃ, Z_LOAD=50ʃ
Between Input and Output
V_Line=0V DC, 1MHz, Between I/O Pins and GND
V_Line=2.5V, 1MHz, Between I/O Pins and GND
MIN.
-
6
-
-
80
12
8
TYP.
-
-
-
300
100
15
10
MAX.
5
-
1.0
-
120
18
12
UNIT
V
V
ǺA
MHz
ʃ
pF
2009. 5. 22
Revision No : 0
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