MPS8550SC Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
hComplementary to MPS8050SC.
MPS8550SC
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
-40
Collector-Emitter Voltage
V_CEO
-25
Emitter-Base Voltage
V_EBO
-5
Collector Current
I_C
-1,200
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
TEST CONDITION
I_C=-0.1mA, I_E=0
I_C=-1mA, I_B=0
I_E=-0.1mA, I_C=0
V_CB=-35V, I_E=0
V_EB=-4V, I_C=0
V_CE=-1V, I_C=-100mA
I_C=-800mA, I_B=-80mA
I_C=-800mA, I_B=-80mA
V_CE=-6V, I_C=-20mA, f=30MHz
MIN.
-40
-25
-5
-
-
200
-
-
150
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-0.1
0.1
300
-0.5
-1.2
-
UNIT
V
V
V
uA
uA
V
V
MHz
2015. 5. 12
Revision No : 0
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