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| MPS8550 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) | |||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
á´Complementary to MPS8050.
MPS8550
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature Range
Tstg
RATING
-40
-25
-6
-1.5
625
150
-55á´150
UNIT
V
V
V
A
mW
á´±
á´±
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CBO
V(BR)CEO
hFE(1)
hFE(2) (Note)
hFE(3)
VCE(sat)
VBE(sat)
VBE
fT
Cob
VCB=-35V, IE=0
VEB=-6V, IC=0
IC=-100á»A, IE=0
IC=-2mA, IB=0
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz, IE=0
Note : hFE(2) Classification B:85á´160 , C : 120á´200 , D : 160á´300
MIN.
-
-
-40
-25
45
85
40
-
-
-
100
-
TYP.
-
-
-
-
170
160
80
-0.28
-0.98
-0.66
200
15
MAX.
-100
-100
-
-
-
300
-
-0.5
-1.2
-1.0
-
-
UNIT
nA
nA
V
V
V
V
V
MHz
pF
1999. 10. 25
Revision No : 1
1/2
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