MPS8050_10 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
hComplementary to MPS8550.
MPS8050
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V_CBO
V_CEO
V_EBO
I_C
Collector Power Dissipation
P_C*
Junction Temperature
T_j
Storage Temperature Range
T_stg
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
RATING
40
25
6
1.5
625
400
150
-55q150
UNIT
V
V
V
A
mW


K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
h_FE(1)
h_FE(2) (Note)
h_FE(3)
V_CE(sat)
V_BE(sat)
V_BE
f_T
V_CB=35V, I_E=0
V_EB=6V, I_C=0
I_C=100ǺA, I_E=0
I_C=2mA, I_B=0
V_CE=1V, I_C=5mA
V_CE=1V, I_C=100mA
V_CE=1V, I_C=800mA
I_C=800mA, I_B=80mA
I_C=800mA, I_B=80mA
V_CE=1V, I_C=10mA
V_CE=10V, I_C=50mA
Collector Output Capacitance
C_ob
V_CB=10V, f=1MHz, I_E=0
Note : h_FE(2) Classification B:85q160 , C : 120q200 , D : 160q300
MIN.
-
-
40
25
45
85
40
-
-
-
100
-
TYP.
-
-
-
-
135
160
110
0.28
0.98
0.66
190
9
MAX.
100
100
-
-
-
300
-
0.5
1.2
1.0
-
-
UNIT
nA
nA
V
V
V
V
V
MHz
pF
2010. 6. 10
Revision No : 3
1/2