MPS8050S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
hComplementary to MPS8550S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
40
V_CEO
25
V_EBO
6
I_C
1.5
P_C *
350
T_j
150
Storage Temperature Range
T_stg
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
A
mW


MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
BH ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_CB=35V, I_E=0
V_EB=6V, I_C=0
I_C=100ǺA, I_E=0
I_C=2mA, I_B=0
h_FE(1)
V_CE=1V, I_C=5mA
DC Current Gain
h_FE(2) (Note) V_CE=1V, I_C=100mA
h_FE(3)
V_CE=1V, I_C=800mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=800mA, I_B=80mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=800mA, I_B=80mA
Base-Emitter Voltage
Transition Frequency
V_BE
V_CE=1V, I_C=10mA
f_T
V_CE=10V, I_C=50mA
Collector Output Capacitance
C_ob
V_CB=10V, f=1MHz, I_E=0
Note : h_FE(2) Classification B:85q160 , C : 120q200 , D : 160q300
2009. 6. 10
Revision No : 2
MIN.
-
-
40
25
45
85
40
-
-
-
100
-
TYP.
-
-
-
-
135
160
110
0.28
0.98
0.66
190
9
MAX. UNIT
100 nA
100 nA
-
V
-
V
-
300
-
0.5
V
1.2
V
1.0
V
-
MHz
-
pF
1/2