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MPS8050SC Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
hComplementary to MPS8550SC.
MPS8050SC
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
25
Emitter-Base Voltage
VEBO
5
Collector Current
IC
1,200
Collector Power Dissipation
PC *
350
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55q150
* PC : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Transition Frequency
fT
TEST CONDITION
IC=0.5mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=1V, IC=100mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=6V, IC=20mA, f=30MHz
MIN.
40
25
5
-
-
200
-
-
150
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
300
0.5
1.2
-
UNIT
V
V
V
uA
uA
V
V
MHz
2015. 5. 12
Revision No : 0
1/2
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