MPS8050S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
40
V_CEO
25
V_EBO
6
I_C
1.5
P_C *
350
T_j
150
Storage Temperature Range
T_stg
-55 150
* P_C : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
A
mW
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
BH ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
h_FE(1)
h_FE(2) (Note)
h_FE(3)
V_CE(sat)
V_BE(sat)
V_BE
f_T
C_ob
V_CB=35V, I_E=0
V_EB=6V, I_C=0
I_C=100 A, I_E=0
I_C=2mA, I_B=0
V_CE=1V, I_C=5mA
V_CE=1V, I_C=100mA
V_CE=1V, I_C=800mA
I_C=800mA, I_B=80mA
I_C=800mA, I_B=80mA
V_CE=1V, I_C=10mA
V_CE=10V, I_C=50mA
V_CB=10V, f=1MHz, I_E=0
Note : h_FE(2) Classification B:85 160 , C : 120 200 , D : 160 300
2003. 3. 25
Revision No : 1
MIN.
-
-
40
25
45
85
40
-
-
-
100
-
TYP.
-
-
-
-
135
160
110
0.28
0.98
0.66
190
9
MAX.
100
100
-
-
-
300
-
0.5
1.2
1.0
-
-
UNIT
nA
nA
V
V
V
V
V
MHz
pF
1/2