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| MPS651 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) | |||
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SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
á´High Voltage : VCEO=60V(Min.).
á´High Current : IC(Max.)=1A.
á´High Transition Frequency : fT=150MHz(Typ.).
á´Wide Area of Safe Operation.
á´Complementary to MPS751.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
RATING
80
60
5
1
2
625
150
-55á´150
UNIT
V
V
V
A
mW
á´±
á´±
MPS651
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
hFE(1)
hFE(2)
V(BR)CEO
VCE(sat)
VBE(sat)
fT
Collector Output Capacitanc
Cob
Note : hFE(1) Classification Y:100á´200 , GR:160á´320
TEST CONDITION
VCB=50V, IE=0
VEB=4V, IC=0
VCE=2V, IC=50mA
VCE=2V, IC=1A
IC=1mA, IB=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
MIN.
-
-
100
30
60
-
-
-
-
TYP.
-
-
-
-
-
0.15
0.85
150
12
MAX.
100
100
320
-
-
0.5
1.2
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1999. 11. 30
Revision No : 2
1/3
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