MMBTA63_08 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
MMBTA63/64 V_CBO
-30
Collector-Emitter
Voltage
MMBTA63/64 V_CES
-30
Emitter-Base Voltage
V_EBO
-10
Collector Current
DC
Pulse
I_C
-500
I_CP
-1
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
A
mW
MMBTA63/64
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V_(BR)CES
I_CBO
I_EBO
I_C=-0.1mA, I_B=0
V_CB=-30V, I_E=0
V_EB=-10V, I_C=0
DC Current Gain
MMBTA63
MMBTA64
MMBTA63
MMBTA64
h_FE(1)
I_C=-10mA, V_CE=-5V
h_FE(2)
I_C=-100mA, V_CE=-5V
Collector-Emitter
Saturation Voltage
Base Emitter
Voltage
MMBTA63/64
MMBTA63/64
V_CE(sat)
V_BE
Current Gain
Bandwith Product
MMBTA63/64
f_T
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
I_C=-100mA, I_B=-0.1mA
I_C=-100mA, V_CE=-5V
I_C=-10mA, f=100MHz
V_CE=-5V
MARK SPEC
TYPE
MARK
MMBTA63
AGX
MMBTA64
AFX
Marking
A X ^{Type Name}
MIN.
-30
-
-
5,000
10,000
10,000
20,000
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-0.1
-0.1
-
-
-
-
-1.5
UNIT
V
A
A
V
-
-
-2.0
V
125
-
-
MHz
Lot No.
2008. 8. 29
Revision No : 5
1/2