MMBTA56_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
FEATURE
hComplementary to MMBTA06
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
-80
Collector-Emitter Voltage
V_CEO
-80
Emitter-Base Voltage
V_EBO
-5
Collector Current
I_C
-500
Emitter Current
I_E
500
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature
T_stg
-55q150
* : Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6mm.
UNIT
V
V
V
mA
mA
mW


MMBTA56
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
ANX ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_CEO
V_(BR)CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
C_ob
TEST CONDITION
V_CB=-80V, I_E=0
V_CE=-60V, I_B=0
I_C=-1mA, I_B=0
V_CE=-1V, I_C=-10mA
V_CE=-1V, I_C=-100mA
I_C=-100mA, I_B=-10mA
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-100mA
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
-80
100
100
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
14
MAX.
-100
-100
-
-
-
-0.25
-1.2
-
-
UNIT
nA
nA
V
V
V
MHz
pF
2005. 11. 14
Revision No : 3
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