MMBTA517_99 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
40
V_CEO
30
V_EBO
10
I_C
400
P_C *
350
T_j
150
Storage Temperature
T_stg
-55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mW
MMBTA517
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
I_C=0.1mA
I_C=10mA
I_E=-1.0mA
V_CB=40V
V_EB=10V
I_C=100mA, V_CE=2V
I_C=100mA, I_B=1mA
I_C=100mA, I_B=10mA
I_C=100mA, f=100MHz, V_CE=2V
V_CB=10V, f=1MHz
MIN.
40
30
10
-
-
30K
-
-
-
-
TYP.
-
-
-
-
-
-
-
1.5
220
5
MAX.
-
-
-
1
1
-
1
2
-
-
UNIT
V
V
V
A
A
V
V
MHz
pF
1999. 11. 30
Revision No : 3
1/2