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MMBTA44_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
hHigh Breakdown Voltage.
hCollector Power Dissipation : PC=350mW.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-BaseVoltage
VCBO
450
Collector-EmitterVoltage
VCEO
400
Emitter-Base Voltage
VEBO
6
Collector Current
IC
300
Collector Power Dissipation
PC *
350
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55q150
* : Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6mm.
UNIT
V
V
V
mA
mW


MMBTA44
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
APX Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cutoff Current
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
ICES
IEBO
DC Current Gain *
hFE
VCE(sat) 1
Collector-Emitter Saturation Voltage *
VCE(sat) 2
VCE(sat) 3
Base-Emitter Saturation Voltage *
VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
Input Capacitance
Cib
*Pulse Test : Pulse Width∔300ǺS, Duty Cycle∔2.0%
TEST CONDITION
IC=100ǺA, IE=0
IC=1mA, IB=0
IC=100ǺA, IB=0
IE=10ǺA, IC=0
VCB=400V, IE=0
VCE=400V, IB=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=10mA, f=10MHz
VCB=20V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
MIN.
450
400
450
6.0
-
-
-
40
50
45
40
-
-
-
-
20
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
100
500
100
-
200
-
-
0.4
0.5
0.75
0.75
-
7
130
UNIT
V
V
V
V
nA
nA
nA
V
V
MHz
pF
pF
2008. 3. 10
Revision No : 2
1/2
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