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MMBTA44 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT-23-3L Plastic-Encapsulate Transistors
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : PC=350mW.
MMBTA44
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-BaseVoltage
VCBO
450
Collector-EmitterVoltage
VCEO
400
Emitter-Base Voltage
VEBO
6
Collector Current
IC
300
Collector Power Dissipation
PC *
350
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cutoff Current
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
ICES
IEBO
DC Current Gain *
hFE
VCE(sat) 1
Collector-Emitter Saturation Voltage *
VCE(sat) 2
VCE(sat) 3
Base-Emitter Saturation Voltage *
VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
Input Capacitance
Cib
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
TEST CONDITION
IC=100 A, IE=0
IC=1mA, IB=0
IC=100 A, IB=0
IE=10 A, IC=0
VCB=400V, IE=0
VCE=400V, IB=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=10mA, f=10MHz
VCB=20V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
MIN.
450
400
450
6.0
-
-
-
40
50
45
40
-
-
-
-
20
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
100
500
100
-
200
-
-
0.4
0.5
0.75
0.75
-
7
130
UNIT
V
V
V
V
nA
nA
nA
V
V
MHz
pF
pF
2008. 3. 10
Revision No : 2
1/2
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