MMBTA42_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
MMBTA42/43
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
hComplementary to MMBTA92/93.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
MMBTA42
300
V_CBO
MMBTA43
200
Collector-Emitter
MMBTA42
300
V_CEO
Voltage
MMBTA43
200
Emitter-Base Voltage
V_EBO
5.0
Collector Current
I_C
500
Emitter Current
I_E
-500
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature
T_stg
-55q150
* : Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6mm.
UNIT
V
V
V
mA
mA
mW


Marking
AAX ^{Type Name}
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Lot No.
ABX ^{Type Name}
Lot No.
MMBTA42
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base
Breakdown Voltage
MMBTA42
MMBTA43
V_(BR)CBO
Collector-Emitter
Breakdown Voltage
MMBTA42
MMBTA43
V_(BE)CEO
DC Current Gain
* h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
Transition Frequency
f_T
Collector Output
Capacitance
MMBTA42
C_ob
MMBTA43
*Pulse Test : Pulse Width∔300ǺS, Duty Cycle∔2.0%
TEST CONDITION
I_C=100ǺA, I_E=0
I_C=1.0mA, I_B=0
I_C=1.0mA, V_CE=10V
I_C=10mA, V_CE=10V
I_C=30mA, V_CE=10V
I_C=20mA, I_B=2.0mA
I_C=20mA, I_B=2.0mA
V_CE=20V, I_C=10mA, f=100MHz
V_CB=20V, I_E=0, f=1MHz
MMBTA43
MIN.
300
200
300
200
40
40
40
-
-
50
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
-
-
-
0.5
0.9
-
3.0
4.0
UNIT
V
V
V
V
MHz
pF
1999. 11. 30
Revision No : 3
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