MMBTA13 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collertor Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CES
V_EBO
I_C
P_C *
T_j
T_stg
30
30
10
500
350
150
-55ᴕ150
* : Package Mounted On 99.5% Alumina 10á´§8á´§0.6mm.
UNIT
V
V
V
mA
mW
á´±
á´±
MMBTA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Emitter Cut-off Current
MMBTA13
V_CES
I_CBO
I_EBO
DC Current Gain
MMBTA14
MMBTA13
h_FE *
MMBTA14
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Current Gain Bandwith Product
f_T
*Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2.0%
TEST CONDITION
I_C=0.1mA
V_CB=30V
V_EB=10V
I_C=10mA, V_CE=5V
I_C=100mA, V_CE=5V
I_C=100mA, I_B=0.1mA
I_C=100mA, V_CE=5V
I_C=10mA, f=100MHz, V_CE=5V
MIN.
30
-
-
5,000
10,000
10,000
20,000
-
-
125
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
-
100
100
-
-
-
-
1.5
2.0
-
UNIT
V
nA
nA
-
V
V
MHz
MARK SPEC
TYPE
MARK
MMBTA13
AIX
MMBTA14
AHX
Marking
A X ^{Type Name}
Lot No.
1999. 11. 30
Revision No : 4
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