MMBTA06_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
DRIVER STAGE AMPLIFIER APPLICATIONS.
VOLTAGE AMPLIFIER APPLICATIONS.
FEATURE
hComplementary to MMBTA56.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
80
Collector-Emitter Voltage
V_CEO
80
Emitter-Base Voltage
V_EBO
6
Collector Current
I_C
500
Emitter Current
I_E
-500
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature
T_stg
-55q150
* : Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6mm.
UNIT
V
V
V
mA
mA
mW


MMBTA06
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
ADX ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_CEO
V_(BR)CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
TEST CONDITION
V_CB=80V, I_E=0
V_CE=60V, I_B=0
I_C=1mA, I_B=0
V_CE=1V, I_C=10mA
V_CE=1V, I_C=100mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
V_CE=2V, I_C=10mA
MIN.
-
-
80
100
100
-
-
100
TYP.
-
-
-
-
-
-
-
-
MAX.
100
100
-
-
-
0.25
1.2
-
UNIT
nA
nA
V
V
V
MHz
2003. 7. 21
Revision No : 3
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