MMBTA06_03 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
DRIVER STAGE AMPLIFIER APPLICATIONS.
VOLTAGE AMPLIFIER APPLICATIONS.
FEATURE
Complementary to MMBTA56.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
T_j
T_stg
80
80
6
500
-500
350
150
-55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mA
mW
MMBTA06
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
ADX ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_CEO
V_(BR)CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
TEST CONDITION
V_CB=80V, I_E=0
V_CE=60V, I_B=0
I_C=1mA, I_B=0
V_CE=1V, I_C=10mA
V_CE=1V, I_C=100mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
V_CE=2V, I_C=10mA
MIN.
-
-
80
100
100
-
-
100
TYP.
-
-
-
-
-
-
-
-
MAX.
100
100
-
-
-
0.25
1.2
-
UNIT
nA
nA
V
V
V
MHz
2003. 7. 21
Revision No : 3
1/2