MMBTA05_05 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
DRIVER STAGE AMPLIFIER APPLICATIONS.
VOLTAGE AMPLIFIER APPLICATIONS.
FEATURES
Complementary to MMBTA55.
Driver Stage Application of 20 to 25 Watts Amplifiers.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CEO
60
Emitter-Base Voltage
V_EBO
6
Collector Current
I_C
500
Emitter Current
I_E
-500
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature
T_stg
-55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mA
mW
MMBTA05
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
ACX ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_CEO
V_(BR)CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=60V, I_E=0
V_CE=60V, I_B=0
I_C=5mA, I_B=0
V_CE=1V, I_C=10mA
V_CE=1V, I_C=100mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
V_CE=1V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
60
100
100
-
-
80
-
TYP.
-
-
-
-
-
-
-
-
10
MAX.
100
100
-
-
-
0.25
1.2
-
-
UNIT
nA
nA
V
V
V
MHz
pF
2005. 6. 28
Revision No : 3
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