MJE5555_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
MJE5555
TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FLUORESCENT LIGHT BALLASTOR APPLICATION.
FEATURES
Excellent Switching Times
: t_stg=2.5 S(Max.), t_f=0.3 S(Max.), at I_C=2.5A
High Collector Voltage : V_CBO=1050V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
RATING
1050
400
12
5
10
2.5
UNIT
V
V
V
A
A
Collector Power Dissipation (Tc=25 )
P_C
75
W
Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55 150
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
C_ob
V_EB=14V, I_C=0
V_CE=5V, I_C=10mA
V_CE=3V, I_C=0.8A
I_C=1A, I_B=0.2A
I_C=3.5A, I_B=1A
I_C=3.5A, I_B=1A
I_C=2A, I_B=0.5A
V_CB=10V, f=0.1MHz, I_E=0
Turn-On Time
Storage Time
t_on
300µS
I_B1
INPUT
t_stg
I_B1
I_B2
I_B2
Fall Time
t_f
I_B1=+0.5A, I_B2=-1.0A
DUTY CYCLE ^<= 2%
Note : h_FE Classification R:20 30, O:25 35, Y: 30~40
OUTPUT
100Ω
V_CC =250V
MIN.
-
10
20
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
45
MAX.
10
-
40
0.5
1.5
1.2
1.6
-
UNIT
A
V
V
pF
-
-
2.0
S
-
-
2.5
S
-
-
0.3
S
2007. 9. 10
Revision No : 1
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