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MJE13009_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A
High Collector Voltage : VCBO=700V.
MJE13009
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
DC
IC
Collector Current
Pulse
ICP
Base Current
IB
Collector Power Dissipation
PC
(Tc=25 )
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
700
400
9
12
24
6
100
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
IEBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
VEB=9V, IC=0
VCE=5V, IC=5A
VCE=5V, IC=8A
IC=5A, IB=1A
IC=8A, IB=1.6A
IC=12A, IB=3A
IC=5A, IB=1A
IC=8A, IB=1.6A
VCB=10V, f=0.1MHz, IE=0
VCE=10V, IC=0.5A
Turn-On Time
Storage Time
Fall Time
ton
300µS
OUTPUT
IB1
INPUT
tstg
IB1
IB2
IB2
tf
IB1=IB2 =1.6A
DUTY CYCLE <= 2%
VCC =125V
Note : hFE Classification O:14 28
MIN.
-
14
6
-
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
180
-
MAX.
1
28
-
1
1.5
3
1.5
1.6
-
-
UNIT
mA
V
V
pF
MHz
-
-
1.1
S
-
-
3
S
-
-
0.7
S
2008. 3. 26
Revision No : 1
1/2
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