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MJE13007_08 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
hExcellent Switching Times
: ton=1.6ǺS(Max.), tf=0.7ǺS(Max.), at IC=5A
hHigh Collector Voltage : VCBO=700V.
MJE13007
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
DC
IC
Collector Current
Pulse
ICP
Base Current
IB
Collector Power Dissipation
(Tc=25)
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
700
400
9
8
16
4
80
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
IEBO
VEB=9V, IC=0
hFE(1) (Note) VCE=5V, IC=2A
hFE(2)
VCE=5V, IC=5A
IC=2A, IB=0.4A
VCE(sat)
IC=5A, IB=1A
IC=8A, IB=2A
VBE(sat)
IC=2A, IB=0.4A
IC=5A, IB=1A
Cob
VCB=10V, f=0.1MHz, IE=0
fT
VCE=10V, IC=0.5A
Turn-On Time
ton
Storage Time
tstg
Fall Time
tf
Note : hFE Classification R:15q27, O:23q39
300µS
IB1
IB1
INPUT
IB2
IB2
IB1=IB2 =1A
DUTY CYCLE <= 2%
OUTPUT
VCC =125V
MIN.
-
15
10
-
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
110
-
MAX.
1
39
-
1
2
3
1.5
1.6
-
-
UNIT
mA
V
V
pF
MHz
-
-
1.6
ǺS
-
-
3
ǺS
-
-
0.7
ǺS
2008. 3. 26
Revision No : 1
1/2
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