MJE13005_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – NPN SILICON POWER TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FLUORESCENT LIGHT BALLASTOR APPLICATION.
FEATURES
hExcellent Switching Times
: t_on=0.8ǺS(Max.), t_f=0.9ǺS(Max.), at I_C=2A
hHigh Collector Voltage : V_CBO=700V.
MJE13005
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
(Tc=25)
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
700
400
9
4
8
2
75
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
I_EBO
V_EB=9V, I_C=0
h_FE(1) (Note) V_CE=5V, I_C=1A
h_FE(2)
V_CE=5V, I_C=2A
I_C=1A, I_B=0.2A
V_CE(sat)
I_C=2A, I_B=0.5A
I_C=4A, I_B=1A
V_BE(sat)
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
C_ob
V_CB=10V, f=0.1MHz, I_E=0
f_T
V_CE=10V, I_C=0.5A
Turn-On Time
t_on
Storage Time
t_stg
Fall Time
t_f
Note : h_FE Classification R:18q27, O:23q35
2008. 3. 26
Revision No : 1
MIN.
-
18
10
-
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
65
-
MAX.
1
35
-
0.5
0.6
1
1.2
1.6
-
-
UNIT
mA
V
V
pF
MHz
-
-
0.8
ǺS
-
-
4
ǺS
-
-
0.9
ǺS
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