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MJE13005_08 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FLUORESCENT LIGHT BALLASTOR APPLICATION.
FEATURES
Excellent Switching Times
: ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A
High Collector Voltage : VCBO=700V.
MJE13005
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
(Tc=25 )
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
700
400
9
4
8
2
75
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
IEBO
VEB=9V, IC=0
hFE(1) (Note) VCE=5V, IC=1A
hFE(2)
VCE=5V, IC=2A
IC=1A, IB=0.2A
VCE(sat)
IC=2A, IB=0.5A
IC=4A, IB=1A
VBE(sat)
IC=1A, IB=0.2A
IC=2A, IB=0.5A
Cob
VCB=10V, f=0.1MHz, IE=0
fT
VCE=10V, IC=0.5A
Turn-On Time
ton
Storage Time
tstg
Fall Time
tf
Note : hFE Classification R:18q27, O:23q35
300µS
IB1
IB1
INPUT
IB2
IB2
IB1=IB2 =0.4A
DUTY CYCLE <= 2%
OUTPUT
VCC =125V
MIN.
-
18
10
-
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
65
-
MAX.
1
35
-
0.5
0.6
1
1.2
1.6
-
-
UNIT
mA
V
V
pF
MHz
-
-
0.8
S
-
-
4
S
-
-
0.9
S
2008. 3. 26
Revision No : 1
1/3
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