MJE13005DF Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
hBuilt-in Free wheeling Diode makes efficient anti saturation operation.
hSuitable for half bridge light ballast Applications.
hLow base drive requirement.
MJE13005DF
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
RATING
800
400
10
5
10
2
UNIT
V
V
V
A
A
P_C
30
W
T_j
150

T_stg
-55q150 
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
I_CBO
I_EBO
V_(BR)CBO
V_(BR)EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
Collector Output Capacitance
C_ob
Note : h_FE Classification R : 18~27, O : 23~35
V_CB=700, I_E=0
V_EB=9V, I_C=0
I_C=10mA, I_E=0
I_E=1mA, I_C=0
V_CE=5V, I_C=1A
V_CE=5V, I_C=2A
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
I_C=4A, I_B=1A
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
V_CB=10V, f=1MHz
2014. 2. 07
Revision No : 3
MIN.
-
-
800
10
18
8
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
65
MAX.
10
10
-
-
35
-
0.5
0.6
1
1.2
1.6
-
UNIT
ǺA
ǺA
7
7
V
V
pF
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