MJE13005DC Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
hBuilt-in Free wheeling Diode makes efficient anti saturation operation.
hSuitable for half bridge light ballast Applications.
hLow base drive requirement.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
700
V
400
V
10
V
5
A
10
2
A
75
W
150

-55q150 
MJE13005DC
TRIPLE DIFFUSED NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Emitter Cut-off Current
DC Current Gain
I_EBO
h_FE(1)
h_FE(2)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
V_BE(sat)
C_ob
f_T
t_on
TEST CONDITION
V_EB=9V, I_C=0
V_CE=5V, I_C=1A
V_CE=5V, I_C=2A
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
I_C=4A, I_B=1A
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
V_CB=10V, f=1MHz
V_CE=10V, I_C=0.5A
Storage Time
t_stg
Fall Time
t_f
Diode Forward Voltage
V_F
*Reverse recovery tims (di/dt=10A/ǺS)
t_rr
*Pulse Test : Pulse Width = 5mS, Duty cycles†10%
I_F=2A
I_F=0.4A
I_F=1A
I_F=2A
2015. 6. 09
Revision No : 1
MIN.
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23
8
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-
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4
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TYP.
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-
-
-
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65
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MAX.
10
35
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0.5
0.6
1
1.2
1.6
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UNIT
ǺA
V
V
pF
MHz
-
0.15
ǺS
2
-
5
ǺS
-
-
0.8
ǺS
-
-
1.6
V
-
800
-
nS
-
1.4
-
ǺS
-
1.9
-
ǺS
1/4