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MJE13005D Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
800
400
10
5
10
2
75
150
-55 150
UNIT
V
V
V
A
A
W
Equivalent Circuit
C
B
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
1. BASE
2. COLLECTOR
3. EMITTER
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Emitter Cut-off Current
DC Current Gain
SYMBOL
IEBO
hFE(1)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Diode Forward Voltage
VBE(sat)
Cob
fT
ton
tstg
tf
VF
*Reverse recovery tims (di/dt=10A/ S)
trr
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : hFE Classification R : 18~27, O : 23~35
E
TEST CONDITION
VEB=9V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=2A
IC=0.5A, IB=0.1A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
VCB=10V, f=1MHz
VCE=10V, IC=0.5A
300µS
IB1
IB1
INPUT
IB2
IB2
IB1=0.4A, IB2=-1A
DUTY CYCLE <= 2%
IF=2A
IF=0.4A
IF=1A
IF=2A
OUTPUT
VCC =300V
MIN.
-
18
8
-
-
-
-
-
-
4
-
TYP.
-
-
-
-
-
-
-
-
65
-
MAX.
10
35
-
0.5
0.6
1
-
1.6
-
-
UNIT
A
V
V
pF
MHz
-
0.15
S
2
-
5
S
-
-
0.8
S
-
-
1.6
V
-
800
-
nS
-
1.4
-
S
-
1.9
-
S
2008. 7. 9
Revision No : 2
1/3
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