MJE13003_09 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
MJE13003
TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: t_on=1.1 S(Max.), t_f=0.7 S(Max.), at I_C=1A
High Collector Voltage : V_CBO=700V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Ta=25
Dissipation
P_C
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
700
400
9
1.5
3
0.75
1.5
20
150
-55 150
UNIT
V
V
V
A
A
W
A
B
C
H
J
K
D
E
F
G
L
M
O
N
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Output Capacitance
Transition Frequency
I_EBO
I_CBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE(sat)
C_ob
f_T
V_EB=9V, I_C=0
V_CB=700V, I_E=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=1A
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1.5A, I_B=0.5A
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
V_CB=10V, f=0.1MHz, I_E=0
V_CE=10V, I_C=0.1A
Turn-On Time
Storage Time
t_on
300µS
I_B1
INPUT
t_stg
I_B1
I_B2
I_B2
Fall Time
t_f
I_B1=I_B2 =0.2A
DUTY CYCLE ^<= 2%
Note : h_FE Classification R:9 15, O:13 21, Y:20~38
OUTPUT
125Ω
V_CC =125V
MIN.
-
-
9
5
-
-
-
-
-
-
4
-
TYP.
-
-
-
-
-
-
-
-
-
21
-
MAX.
10
10
38
-
0.5
1
3
1
1.2
-
-
UNIT
A
A
V
V
pF
MHz
-
1.1
S
-
-
4.0
S
-
-
0.7
S
2009. 8. 19
Revision No : 10
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