MJE13003HV Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: t_on=1.1 S(Typ.), t_f=0.7 S(Typ.), at I_C=1A
High Collector Voltage : V_CBO=900V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
RATING
900
530
9
1.5
3
0.75
UNIT
V
V
V
A
A
Collector Power Dissipation (Tc=25 )
P_C
20
W
Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55 150
MJE13003HV
TRIPLE DIFFUSED NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
O
N
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
I_EBO
h_FE(1)
*h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
V_EB=9V, I_C=0
V_CE=10V, I_C=10 A
V_CE=10V, I_C=0.4A
V_CE=10V, I_C=1A
I_C=0.5A, I_B=0.1A
I_C=1.5A, I_B=0.5A
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
Collector Output Capacitance
C_ob
V_CB=10V, f=0.1MHz, I_E=0
Transition Frequency
f_T
V_CE=10V, I_C=0.1A
Turn-On Time
Storage Time
Fall Time
t_on
300µS
OUTPUT
I_B1
INPUT
t_stg
I_B1
I_B2
I_B2
125Ω
t_f
I_B1=I_B2 =0.2A
DUTY CYCLE ^<= 2%
V_CC =125V
*Note : h_FE Classification R:20 30, O:25 35, Y: 30~50
MIN.
-
15
20
6
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
21
-
MAX.
10
50
50
-
0.8
2.5
1
1.2
-
-
UNIT
A
V
V
pF
MHz
-
1.1
-
S
-
3.0
-
S
-
0.7
-
S
2007. 9. 10
Revision No : 1
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