MJD112 Datasheet, PDF (1/2 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

SEMICONDUCTOR
TECHNICAL DATA
MJD112/L
EPITAXIAL PLANAR NPN TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h_FE=1000(Min.), V_CE=4V, I_C=1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix)
Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
100
100
5
2
4
50
1.0
20
150
-55 150
UNIT
V
V
V
A
mA
W
C
B
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
A
C
H
G
F
F
123
I
J
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0+_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5+_ 0.1
L
K
2.0+_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
R1
= 10kΩ
R₂
= 0.6kΩ
E
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
V_CEO(SUS)
I_CEO
I_CBO
I_EBO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
V_CE(sat)
V_BE(ON)
f_T
C_ob
TEST CONDITION
I_C=30mA, I_B=0
V_CE=50V, I_B=0
V_CB=100V, I_E=0
V_EB=5V, I_C=0
V_CE=3V, I_C=0.5A
V_CE=3V, I_C=2A
I_C=2A, I_B=8mA
V_CE=3V, I_C=2A
V_CE=10V, I_C=0.75A, f=1MHz
V_CB=10V, I_E=0, f=0.1MHz
IPAK
MIN.
100
-
-
-
500
1,000
-
-
25
-
TYP. MAX.
-
-
-
20
-
20
-
2
-
-
12,000 -
-
2.0
-
2.8
-
-
-
100
UNIT
V
A
mA
V
V
MHz
pF
2003. 3. 27
Revision No : 4
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