MBRD10U100CT Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
MBRD10U100CT
SCHOTTKY BARRIER TYPE DIODE
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
hAverage Output Rectified Current
: I_O=10A.
hRepetitive Peak Reverse Voltage
: V_RRM=100V.
hLow Reverse Current.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Repetitive Peak Reverse Voltage
V_RRM
100
Average Output Rectified
Current (Tc=114) (Note)
I_O
10
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
I_FSM
45
Junction Temperature
T_j
-40q150
Storage Temperature Range
T_stg
-55q150
Note : average forward current of centertap full wave connection.
UNIT
V
A
A


A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. N.C.
2. CATHODE
3. ANODE
DPAK (1)
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Repetitive Peak
Reverse Current
Thermal Resistance
Note : A value of one cell
(Note)
(Note)
(Note)
V_FM
I_RRM
R_th(j-c)
TEST CONDITION
I_FM=5A
V_RRM=100V
Juction to Case
MIN.
-
TYP.
-
MAX.
0.85
UNIT
V
-
2
50
µA
-
-
6.0 /W
2010. 10. 8
Revision No : 0
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