KUSB50QN Datasheet, PDF (1/10 Pages) KEC(Korea Electronics) – HIGH-SPEED USB2.0 DPDT SWITCH

SEMICONDUCTOR
TECHNICAL DATA
KUSB50QN
HIGH-SPEED USB2.0 DPDT SWITCH
HIGH-SPEED(480Mbps) USB2.0 DPDT SWITCH
DESCRIPTION
The KUSB50QN is a High-Speed(480Mbps) USB2.0 signal switch.
Configured as a double-pole double-throw (DPDT) switch, it is optimized
for switching between 2 Hi-Speed sources or a Hi-Speed(480Mbps) and
Full-Speed(12Mbps) source. Its wide Bandwidth (720MHz) is wide enough
to pass High-Speed USB2.0 differential signals. Industry-leading advantages
include a propagation delay of less than 250ps, resulting from its low channel
resistance and low on capacitance. It is bidirectional and offers little or no
attenuation of the High-Speed signal at the outputs.
Its high channel-to-channel crosstalk rejection results in minimal noise
interference. The switch is designed to minimize current consumption even
when the control voltage applied to the S pin, is lower than the V_CC. The
KUSB50QN also offers over-voltage protection per the USB2.0 Specification.
With the chip powered ON or OFF, all data I/O pins can withstand a short to
Vbus(5.25V).
B
Pin 1
A
TOP VIEW
F
E
CO.1
G
D
H
C
BOTTOM VIEW
J
SIDE VIEW 1
I
K
SIDE VIEW 2
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
1.80 +_ 0.05
1.40 +_ 0.05
0.20 +_ 0.05
0.40 +_ 0.10
0.20 REF
0.40 REF
0.80 REF
0.50 +_ 0.10
0.05 Max
0.20 REF
0.85 +_ 0.05
FEATURES
USB2.0 compliant (High-speed and Full-speed).
Low On Resistance, 5.5 (Typ) @ V_CC=3V .
Channel On Capacitance, 6.5 (Typ) @ f=1 .
Low Power Consumption (Max :1 )
: 10 Maximum I_CCT over an Expanded Voltage Range
(V_IN=1.8V, V_CC=4.3V).
Wide-3dB bandwidth, >720MHz.
High ESD Protection.
:Data Pin ESD Rating : 8.0kV(HBM)
Control Pin ESD Rating : 8.0kV(HBM)
Power/GND ESD Rating : > 20kV(HBM)
All pins ESD Rating : 300V(MM).
Power Off protection
: When V_CC =0V, D+/D -can tolerate up to 5.25V
APPLICATIONS
Routes signals for USB2.0
Differential Signal Data Routing
Hand-held devices
QFN-10
Marking
U2
0A
2010. 2. 10
Revision No : 0
1/10