KU3600N10W_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
DC/DC Converters.
FEATURES
hV_DSS(Min.)= 100V, I_D= 1.7A
hDrain-Source ON Resistance : R_DS(ON)=0.36 ʃ(max) @V_GS =10V
hQg(typ.) =4.2nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
V_DSS
100
Gate-Source Voltage
@T_C=25
Drain Current
@T_C=100
V_GSS
I_D
‚20
1.7*
1.0*
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
T_A=25
Derate above25
I_DP
E_AS
E_AR
dv/dt
P_D
6.4*
12.4
0.1
4.5
2.0*
0.016
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Thermal Characteristics
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5*
* : Surface Mounted on FR4 Board (50mmƒ50mm, 1.0t)
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
KU3600N10W
N CHANNEL TRENCH MOS FIELD
EFFECT TRANSISTOR
PIN CONNECTION
2011. 4. 7
Revision No : 0
1/6