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KU3600N10W Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
DC/DC Converters.
FEATURES
hVDSS(Min.)= 100V, ID= 1.7A
hDrain-Source ON Resistance : RDS(ON)=0.36 Ê(max) @VGS =10V
hQg(typ.) =4.2nC
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
100
Gate-Source Voltage
@TC=25Â
Drain Current
@TC=100Â
VGSS
ID
Â20
1.7*
1.0*
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TA=25Â
Derate above25Â
IDP
EAS
EAR
dv/dt
PD
6.4*
12.4
0.1
4.5
2.0*
0.016
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55q150
Thermal Characteristics
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5*
* : Surface Mounted on FR4 Board (50mmÂ50mm, 1.0t)
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
KU3600N10W
N CHANNEL TRENCH MOS FIELD
EFFECT TRANSISTOR
PIN CONNECTION
2011. 4. 7
Revision No : 0
1/6
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