KU3600N10D Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
DC/DC Converters.
FEATURES
hV_DSS(Min.)= 100V, I_D= 5A
hDrain-Source ON Resistance : R_DS(ON)=0.36 ʃ(max) @V_GS =10V
hQg(typ.) =4.2nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T_C=25
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
T_A=25
Derate above25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R_thJC
R_thJA
RATING
100
‚20
5
3.1
13
12.4
0.1
4.5
22.7
0.18
150
-55q150
5.5
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
KU3600N10D
N CHANNEL TRENCH MOS FIELD
EFFECT TRANSISTOR
A
C
D
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
2013. 7. 02
Revision No : 0
1/6