KU310N10P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
K
hV_DSS= 100V, I_D= 34A
hDrain-Source ON Resistance :
R_DS(ON)=31mʃ(Max.) @V_GS = 10V
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KU310N10P KU310N10F
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
100
‚20
34
23
21.5
15
110*
60
2.3
4.5
83.3
38
0.67
0.3
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
150

Storage Temperature Range
Thermal Characteristics
T_stg
-55 ~ 150

Thermal Resistance, Junction-to-Case R_thJC
1.5
3.3
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
/W
/W
KU310N10P/F
N-ch Trench MOS FET
KU310N10P
KU310N10F
PIN CONNECTION
2013. 5. 21
Revision No : 2
1/7