KU310N10P Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET

SEMICONDUCTOR
TECHNICAL DATA
KU310N10P
N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
hV_DSS= 100V, I_D= 34A
hDrain-Source ON Resistance :
R_DS(ON)=31mʃ(Max.) @V_GS = 10V
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
V_DSS
100
Gate-Source Voltage
Drain Current
@T_C=25
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
‚20
34
21.5
110*
60
2.3
4.5
83.3
0.67
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
1.5
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
A
E
I
O
C
F
G
B
Q
K
P
M
L
D
NN
J
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
PIN CONNECTION
D
G
S
2011. 1. 20
Revision No : 0
1/7