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KU310N10D Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET | |||
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SEMICONDUCTOR
TECHNICAL DATA
KU310N10D
N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
hVDSS= 100V, ID= 27A
hDrain-Source ON Resistance :
RDS(ON)=31mÊ(Max.) @VGS = 10V
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
VDSS
100
Gate-Source Voltage
Drain Current
@TC=25Â
@TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Â20
27
17
110*
60
2.3
4.5
52
0.42
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
2.4
Thermal Resistance,
Junction-to-Ambient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
D
G
S
2011. 1. 21
Revision No : 0
1/7
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