KU2307Q Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack..
FEATURES
V_DSS=30V, I_D=16A.
Drain to Source On Resistance.
R_DS(ON)=6.3m (Max.) @ V_GS=10V
R_DS(ON)=10.7m (Max.) @ V_GS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
V_DSS
30
V
Gate to Source Voltage
V_GSS
20
V
Drain Current
DC@Ta=25 (Note 1) ^ID
16
A
Pulsed
I_DP
64
A
Drain Power Dissipation @Ta=25
(Note 1)
P_D
2.5
W
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55~150
Thermal Resistance, Junction to Ambient (Note 1) ^RthJA
50
/W
Note1) Surface Mounted on 1 1 FR4 Board, t 10sec.
KU2307Q
N-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KU2307Q
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S2
7D
2
7
3
6
S₃
6_D
G₄
4
5D
5
2009. 4. 27
Revision No : 0
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