KU2307K Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KU2307K
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
5
D
8
L1
4
e
1
b
FEATURES
V_DSS=30V, I_D=79A.
Low Drain to Source On-state Resistance.
: R_DS(ON)=6.0m (Max.) @ V_GS=10V
: R_DS(ON)=10.3m (Max.) @ V_GS=4.5V
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@T_C=25
Pulsed
Single Pulsed Avalanche Energy
(Note1)
(Note2)
(Note3)
V_DSS
V_GSS
I_D
I_DP
E_AS
30
V
20
V
79
A
316
203
mJ
@T_C=25
Drain Power Dissipation
@Ta=25
(Note1)
P_D
(Note2)
62.5
W
2.5
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
T_j
150
T_stg
-55 150
(Note1) R_thJC
2.0
/W
Thermal Resistance, Junction to Ambient (Note2) R_thJA
50
/W
Note 1) R_thJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=32.5 H, I_AS=79A, V_DD=15V, V_GS=10V, Starting T_j=25
H
8
D1
5
E
E1
E2
A
C
K
L
1
4
1,2,3 : Source
4 : Gate
5,6,7,8 : Drain
DIM MILLIMETERS
A 1.00 +_ 0.10
b 0.41+0.10/-0.08
C 0.25 +_ 0.05
D 4.90 +_ 0.10
D1 3.81+0.15/-0.20
E 6.00 +_ 0.10
E1 5.75 +_ 0.05
E2 3.58 +_ 0.20
e
1.27 BSC
H 0.51 +_ 0.10
K 1.10 MIN
L 0.61 +_ 0.10
L1 0.13 +_ 0.07
0 ~ 12
PSOP-8
MARKING
KU2307
K
Type Name
Lot No
PIN CONNECTION (TOP VIEW)
DDDD
8765
DD D D
1234
SSSG
S S SG
2009. 7. 30
Revision No : 0
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