KU2303K Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KU2303K
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
5
D
8
L1
4
e
1
b
FEATURES
V_DSS=30V, I_D=66A.
Low Drain to Source On-state Resistance.
: R_DS(ON)=7.4m (Max.) @ V_GS=10V
: R_DS(ON)=13.8m (Max.) @ V_GS=4.5V
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
V_DSS
V_GSS
30
V
20
V
Drain Current
DC@T_C=25 (Note1)
I_D
Pulsed
(Note2) I_DP
66
A
264
Single Pulsed Avalanche Energy
(Note3) E_AS
130
mJ
@T_C=25
Drain Power Dissipation
@Ta=25
(Note1)
P_D
(Note2)
54
W
2.5
Maximum Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55 150
Thermal Resistance, Junction to Case
(Note1) R_thJC
2.3
/W
Thermal Resistance, Junction to Ambient (Note2) R_thJA
50
/W
Note 1) R_thJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=29.8 H, I_AS=66A, V_DD=15V, V_GS=10V, Starting T_j=25
H
8
D1
5
E
E1
E2
A
C
K
L
1
4
1,2,3 : Source
4 : Gate
5,6,7,8 : Drain
DIM MILLIMETERS
A 1.00 +_ 0.10
b 0.41+0.10/-0.08
C 0.25 +_ 0.05
D 4.90 +_ 0.10
D1 3.81+0.15/-0.20
E 6.00 +_ 0.10
E1 5.75 +_ 0.05
E2 3.58 +_ 0.20
e
1.27 BSC
H 0.51 +_ 0.10
K 1.10 MIN
L 0.61 +_ 0.10
L1 0.13 +_ 0.07
0 ~ 12
PSOP-8
MARKING
KU2303
K
Type Name
Lot No
PIN CONNECTION (TOP VIEW)
DDDD
DD D D
SSSG
S S SG
2009. 7. 30
Revision No : 0
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