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KU086N10P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
K
hVDSS= 100V, ID= 95A
hDrain-Source ON Resistance :
RDS(ON)=8.6mÊ(Max.) @VGS = 10V
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KU086N10P KU086N10F
Drain-Source Voltage
Gate-Source Voltage
@TC=25Â
Drain Current @TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
100
Â20
95
50
60
32.5
400*
570
7.1
4.5
167
50
1.33
0.4
V
V
A
mJ
mJ
V/ns
W
W/Â
Maximum Junction Temperature
Tj
150
Â
Storage Temperature Range
Thermal Characteristics
Tstg
-55 ~ 150
Â
Thermal Resistance, Junction-to-Case RthJC
0.75
2.5
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
Â/W
Â/W
KU086N10P/F
N-ch Trench MOS FET
KU086N10P
KU086N10F
PIN CONNECTION
2011. 1. 20
Revision No : 0
1/7
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