KU063N03Q Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack..
FEATURES
hVDSS=30V, ID=16A.
hDrain to Source On Resistance.
RDS(ON)=6.3mʃ(Max.) @ VGS=10V
RDS(ON)=10.7mʃ(Max.) @ VGS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
‚20
V
Drain Current
DC@Ta=25 (Note 1) ^ID
16
A
Pulsed
IDP
64
A
Drain Power Dissipation @Ta=25 (Note 1) ^PD
2.5
W
Maximum Junction Temperature
Tj
150

Storage Temperature Range
Tstg _{-55~150 }
Thermal Resistance, Junction to Ambient (Note 1) ^RthJA
Note1) Surface Mounted on 1Œƒ1ŒFR4 Board, t†10sec.
50
/W
KU063N03Q
N-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KU063N
03Q
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S2
7D
2
7
3
6
S₃
6_D
G₄
4
5D
5
2010. 6. 17
Revision No : 0
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