KU056N03Q Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack.
FEATURES
hV_DSS=30V, I_D=17A.
hDrain to Source On Resistance.
R_DS(ON)=5.6mʃ(Max.) @ V_GS=10V
R_DS(ON)=9.7mʃ(Max.) @ V_GS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
V_DSS
30
V
Gate to Source Voltage
V_GSS
‚20
V
Drain Current
DC@Ta=25 (Note 1)
I_D
17
A
Pulsed
I_DP
68
A
Drain Power Dissipation @Ta=25 (Note 1)
P_D
2.5
W
Maximum Junction Temperature
Storage Temperature Range
T_j
150

T_stg
-55~150 
Thermal Resistance, Junction to Ambient (Note 1) R_thJA
Note1) Surface Mounted on 1Œƒ1ŒFR4 Board, t†10sec.
50
/W
KU056N03Q
N-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KU056N
03Q
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S2
7D
2
7
3
6
S₃
6_D
G₄
4
5D
5
2010. 6. 17
Revision No : 0
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