KU048N03D Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KU048N03D
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
FEATURES
hVDSS=30V, ID=79A.
hLow Drain to Source On-state Resistance.
: RDS(ON)=4.8mʃ(Max.) @ VGS=10V
: RDS(ON)=6.5mʃ(Max.) @ VGS=4.5V
A
C
D
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
‚20
V
Drain Current
DC@TC=25 (Note1) ID
Pulsed
(Note2) ^IDP
84
A
336
Single Pulsed Avalanche Energy
(Note3) ^EAS
124
mJ
@TC=25
Drain Power Dissipation
(Note1)
PD
@Ta=25 (Note2)
60
W
3.8
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg _-55q150
Thermal Resistance, Junction to Case
(Note1) ^RthJC
2.1
Thermal Resistance, Junction to Ambient (Note2) ^RthJA
40
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1Œƒ1ŒPad of 2 oz copper.
Note 3) L=18ǺH, IAS=84A, VDD=15V, VGS=10V, Starting Tj=25


/W
/W
Marking
DPAK (1)
KU048N03
D
Type Name
Lot No
PIN CONNECTION (TOP VIEW)
D
2
2
1
3
G
S
1
3
2010. 6. 17
Revision No : 0
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