KU045N10P Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
K
hV_DSS= 100V, I_D= 150A
hDrain-Source ON Resistance :
R_DS(ON)=4.5mʃ(Max.) @V_GS = 10V
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T_C=25
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
T_j
T_stg
R_thJC
R_thJA
RATING
100
‚20
150
94.9
400*
860
8.8
4.5
192
1.54
150
-55 ~ 150
0.65
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
PIN CONNECTION
KU045N10P
N-ch Trench MOS FET
2012. 5. 23
Revision No : 0
1/7