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KU035N06P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET | |||
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SEMICONDUCTOR
TECHNICAL DATA
KU035N06P
N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
hVDSS= 60V, ID= 160A
hDrain-Source ON Resistance :
RDS(ON)=3.5mÊ(Max.) @VGS = 10V
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
Drain Current
@TC=25Â
@TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Â20
160*
101
480*
960
12
4.5
167
1.33
V
A
mJ
mJ
V/ns
W
W/Â
Maximum Junction Temperature
Tj
150
Â
Storage Temperature Range
Tstg
-55 ~ 150
Â
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.75
Â/W
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
Â/W
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
A
E
I
O
C
F
G
B
Q
K
P
M
L
D
NN
J
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
PIN CONNECTION
D
G
S
2011. 1. 12
Revision No : 0
1/7
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